Infineon IKWH30N65WR5XKSA1, Type N-Channel IGBT, 60 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

R 43,76

(exc. VAT)

R 50,32

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 21.88R 43.76
10 - 18R 21.335R 42.67
20 - 28R 20.695R 41.39
30 +R 19.865R 39.73

*price indicative

Packaging Options:
RS stock no.:
232-6736
Mfr. Part No.:
IKWH30N65WR5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Number of Transistors

1

Maximum Power Dissipation Pd

190W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Length

21.1mm

Series

IKWH30N65WR5

Height

5.21mm

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon's 30 A reverse conducting TRENCHSTOP 5 WR5 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC stage in RAC / CAC and DC/DC in Welding application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for price sensitive customers. WR5 IGBT in TO-247-3-HCC also enable more reliable design with the increased clearance and creep age distances.

Monolithically integrated diode

Stable temperature behaviour

Improved reliability against package contamination

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