STMicroelectronics, Type N-Channel IGBT, 60 A 650 V, 4-Pin TO-247, Through Hole
- RS stock no.:
- 206-6065
- Mfr. Part No.:
- STGWA30IH65DF
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 2 258,28
(exc. VAT)
R 2 597,01
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 75.276 | R 2,258.28 |
| 120 - 240 | R 73.394 | R 2,201.82 |
| 270 - 480 | R 71.192 | R 2,135.76 |
| 510 - 990 | R 68.345 | R 2,050.35 |
| 1020 + | R 65.611 | R 1,968.33 |
*price indicative
- RS stock no.:
- 206-6065
- Mfr. Part No.:
- STGWA30IH65DF
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 60A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 108W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Standards/Approvals | RoHS | |
| Series | STG | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 60A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 108W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 4 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Height 5.1mm | ||
Standards/Approvals RoHS | ||
Series STG | ||
Automotive Standard No | ||
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Designed for soft commutation only
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient
Related links
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