Infineon IHW40N65R6XKSA1 IGBT 650 V, 3-Pin PG-TO247-3
- RS stock no.:
- 225-0573
- Mfr. Part No.:
- IHW40N65R6XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 240 units)*
R 9 101,04
(exc. VAT)
R 10 466,16
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 19 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 240 - 480 | R 37.921 | R 9,101.04 |
| 720 - 960 | R 36.973 | R 8,873.52 |
| 1200 + | R 35.864 | R 8,607.36 |
*price indicative
- RS stock no.:
- 225-0573
- Mfr. Part No.:
- IHW40N65R6XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 210 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 210 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon IHW40N65R6 is the 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
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