Infineon, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface
- RS stock no.:
- 218-4389
- Mfr. Part No.:
- IGB50N65H5ATMA1
- Manufacturer:
- Infineon
Image representative of range
Subtotal (1 reel of 1000 units)*
R 26 319,00
(exc. VAT)
R 30 267,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
- 2,000 unit(s) ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 26.319 | R 26,319.00 |
| 2000 - 2000 | R 25.661 | R 25,661.00 |
| 3000 + | R 24.891 | R 24,891.00 |
*price indicative
- RS stock no.:
- 218-4389
- Mfr. Part No.:
- IGB50N65H5ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 270W | |
| Number of Transistors | 1 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 4.57mm | |
| Series | High Speed Fifth Generation | |
| Length | 10.31mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 270W | ||
Number of Transistors 1 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 4.57mm | ||
Series High Speed Fifth Generation | ||
Length 10.31mm | ||
Automotive Standard No | ||
