Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	165 W
	Package Type	TO-220
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	10.67 x 4.83 x 16.51mm
	Minimum Operating Temperature	-55 °C
	Maximum Operating Temperature	+150 °C

	Select all
	Brand onsemi
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 165 W
	Package Type TO-220
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 10.67 x 4.83 x 16.51mm
	Minimum Operating Temperature -55 °C
	Maximum Operating Temperature +150 °C

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi FGP20N60UFDTU IGBT, 40 A 600 V, 3-Pin TO-220, Through Hole

Discrete IGBTs, Fairchild Semiconductor

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