STMicroelectronics STGF20H60DF IGBT, 40 A 600 V, 3-Pin TO-220FP, Through Hole

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Subtotal (1 pack of 5 units)*

R 282,20

(exc. VAT)

R 324,55

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 56.44R 282.20
50 - 120R 55.03R 275.15
125 - 495R 53.38R 266.90
500 - 995R 51.244R 256.22
1000 +R 49.194R 245.97

*price indicative

Packaging Options:
RS stock no.:
791-9349
Mfr. Part No.:
STGF20H60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

167 W

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 15.75mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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