onsemi FGB20N60SFD-F085 IGBT, 40 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

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Unavailable
RS will no longer stock this product.
Packaging Options:
RS stock no.:
864-8792
Mfr. Part No.:
FGB20N60SFD-F085
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

208 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 9.65 x 4.83mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Automotive IGBT, Fairchild Semiconductor


A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.

Features


• Positive temperaure co-efficient for easy parallel operation
• High current capability
• Low saturation voltage
• High input impedance
• Tightened parameter distribution

RS Product Codes


864-8792 FGB20N60SFD_F085 IGBT 600V 20A D2PAK-2
864-8852 FGH40N60SMD_F085 IGBT 600V 40A TO247
864-8877 FGH60N60SMD_F085 IGBT 600V 60A TO247
135-8687 FGB40T65SPD_F085 IGBT 650V 40A TO263
135-8663 FGB40T65SPD_F085 IGBT 650V 40A TO263 (Pack of 800)
864-8871 FGH75T65UPD_F085 IGBT 650V 75A TO247
124-1447 FGH75T65UPD_F085 IGBT 650V 75A TO247 (Pack of 30)

Note

Quoted current ratings apply when junction temperature Tc = +100°C.

Standards

AEC-Q101


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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