onsemi, Type N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247, Through Hole

RS stock no.:: 145-3284
Mfr. Part No.:: NGTB25N120FL3WG
Manufacturer:: onsemi

onsemi, Type N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

R 2 355,27

(exc. VAT)

R 2 708,55

(inc. VAT)

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Units	Per unit	Per Tube*
30 +	R 78.509	R 2,355.27

*price indicative

RS stock no.:: 145-3284
Mfr. Part No.:: NGTB25N120FL3WG
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	IGBT-Ultra Field Stop
	Maximum Continuous Collector Current Ic	25A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	349W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Switching Speed	1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT	1.7V
	Maximum Gate Emitter Voltage VGEO	±30 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	20.8mm
	Standards/Approvals	RoHS
	Series	Field Stop
	Width	16.25 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type IGBT-Ultra Field Stop
	Maximum Continuous Collector Current Ic 25A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 349W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Switching Speed 1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT 1.7V
	Maximum Gate Emitter Voltage VGEO ±30 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 20.8mm
	Standards/Approvals RoHS
	Series Field Stop
	Width 16.25 mm
	Automotive Standard No

COO (Country of Origin):: CN

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi, Type N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247, Through Hole

IGBT Discretes, ON Semiconductor

IGBT Discretes, ON Semiconductor

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