onsemi NGTB25N120FL3WG, Type N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 123-8830
- Mfr. Part No.:
- NGTB25N120FL3WG
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 239,36
(exc. VAT)
R 275,26
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 12 unit(s) shipping from 18 May 2026
- Plus 34 unit(s) shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 119.68 | R 239.36 |
| 10 - 48 | R 116.69 | R 233.38 |
| 50 - 98 | R 113.19 | R 226.38 |
| 100 - 248 | R 108.66 | R 217.32 |
| 250 + | R 104.315 | R 208.63 |
*price indicative
- RS stock no.:
- 123-8830
- Mfr. Part No.:
- NGTB25N120FL3WG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 25A | |
| Product Type | IGBT-Ultra Field Stop | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 349W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 20.8mm | |
| Series | Field Stop | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 25A | ||
Product Type IGBT-Ultra Field Stop | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 349W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 20.8mm | ||
Series Field Stop | ||
Automotive Standard No | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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