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onsemi NGTB25N120FL3WG, Type N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247, Through Hole

RS stock no.:: 123-8830
Mfr. Part No.:: NGTB25N120FL3WG
Manufacturer:: onsemi

onsemi NGTB25N120FL3WG, Type N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247, Through Hole

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Bulk discount available

Subtotal (1 pack of 2 units)*

R 236,40

(exc. VAT)

R 271,86

(inc. VAT)

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Units	Per unit	Per Pack*
2 - 8	R 118.20	R 236.40
10 - 48	R 115.245	R 230.49
50 - 98	R 111.79	R 223.58
100 - 248	R 107.32	R 214.64
250 +	R 103.025	R 206.05

*price indicative

RS stock no.:: 123-8830
Mfr. Part No.:: NGTB25N120FL3WG
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current Ic	25A
	Product Type	IGBT-Ultra Field Stop
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	349W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Switching Speed	1MHz
	Maximum Gate Emitter Voltage VGEO	±30 V
	Minimum Operating Temperature	-55°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.7V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Series	Field Stop
	Length	20.8mm
	Width	16.25 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Maximum Continuous Collector Current Ic 25A
	Product Type IGBT-Ultra Field Stop
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 349W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Switching Speed 1MHz
	Maximum Gate Emitter Voltage VGEO ±30 V
	Minimum Operating Temperature -55°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.7V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Series Field Stop
	Length 20.8mm
	Width 16.25 mm
	Automotive Standard No

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi NGTB25N120FL3WG, Type N-Channel IGBT-Ultra Field Stop, 25 A 1200 V, 3-Pin TO-247, Through Hole

IGBT Discretes, ON Semiconductor

IGBT Discretes, ON Semiconductor

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