onsemi NGTB30N120LWG IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 124-5386
- Mfr. Part No.:
- NGTB30N120LWG
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
R 2 286,57
(exc. VAT)
R 2 629,56
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 76.219 | R 2,286.57 |
| 60 - 120 | R 74.695 | R 2,240.85 |
| 150 - 270 | R 72.454 | R 2,173.62 |
| 300 - 570 | R 69.556 | R 2,086.68 |
| 600 + | R 66.774 | R 2,003.22 |
*price indicative
- RS stock no.:
- 124-5386
- Mfr. Part No.:
- NGTB30N120LWG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 260 W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.08mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 260 W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.08mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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