onsemi FGA30N120FTDTU IGBT, 60 A 1200 V, 3-Pin TO-3PN, Through Hole
- RS stock no.:
- 864-8776
- Mfr. Part No.:
- FGA30N120FTDTU
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
R 51,64
(exc. VAT)
R 59,39
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 + | R 51.64 |
*price indicative
- RS stock no.:
- 864-8776
- Mfr. Part No.:
- FGA30N120FTDTU
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 339 W | |
| Package Type | TO-3PN | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.8 x 5 x 20.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 339 W | ||
Package Type TO-3PN | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5 x 20.1mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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