Infineon 512 kB SPI FRAM 8-Pin SOIC, FM25V05-G
- RS stock no.:
- 125-4227
- Mfr. Part No.:
- FM25V05-G
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
R 146,23
(exc. VAT)
R 168,16
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3 unit(s) shipping from 23 March 2026
- Plus 73 unit(s) shipping from 30 March 2026
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Units | Per unit |
|---|---|
| 1 - 9 | R 146.23 |
| 10 - 49 | R 142.57 |
| 50 - 99 | R 138.29 |
| 100 - 499 | R 132.76 |
| 500 + | R 127.45 |
*price indicative
- RS stock no.:
- 125-4227
- Mfr. Part No.:
- FM25V05-G
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 512kB | |
| Product Type | FRAM | |
| Organisation | 64k x 8 Bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 18ns | |
| Maximum Clock Frequency | 40MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Length | 4.97mm | |
| Height | 1.38mm | |
| Width | 3.98 mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Maximum Supply Voltage | 3.6V | |
| Number of Words | 64K | |
| Number of Bits per Word | 8 | |
| Automotive Standard | AEC-Q100 | |
| Minimum Supply Voltage | 2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 512kB | ||
Product Type FRAM | ||
Organisation 64k x 8 Bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 18ns | ||
Maximum Clock Frequency 40MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Length 4.97mm | ||
Height 1.38mm | ||
Width 3.98 mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Maximum Supply Voltage 3.6V | ||
Number of Words 64K | ||
Number of Bits per Word 8 | ||
Automotive Standard AEC-Q100 | ||
Minimum Supply Voltage 2V | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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