Infineon 256 kB SPI FRAM 8-Pin SOIC

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Bulk discount available

Subtotal (1 tube of 97 units)*

R 13 250,782

(exc. VAT)

R 15 238,409

(inc. VAT)

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Units
Per unit
Per Tube*
97 - 97R 136.606R 13,250.78
194 - 194R 133.191R 12,919.53
291 - 485R 129.196R 12,532.01
582 - 970R 124.028R 12,030.72
1067 +R 119.067R 11,549.50

*price indicative

RS stock no.:
188-5425
Mfr. Part No.:
FM25W256-G
Manufacturer:
Infineon
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Brand

Infineon

Memory Size

256kB

Product Type

FRAM

Organisation

32K x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Maximum Clock Frequency

20MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Height

1.38mm

Standards/Approvals

No

Width

3.98 mm

Length

4.97mm

Maximum Operating Temperature

85°C

Maximum Supply Voltage

5.5V

Minimum Supply Voltage

2.7V

Number of Words

32k

Automotive Standard

AEC-Q100

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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