Infineon 2 MB SPI FRAM 8-Pin SOIC, FM25V20A-G
- RS stock no.:
- 124-2990
- Mfr. Part No.:
- FM25V20A-G
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
R 349,55
(exc. VAT)
R 401,98
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 11 unit(s) ready to ship from another location
- Plus 183 unit(s) shipping from 13 February 2026
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Units | Per unit |
|---|---|
| 1 - 9 | R 349.55 |
| 10 - 24 | R 340.81 |
| 25 - 99 | R 330.59 |
| 100 - 499 | R 317.37 |
| 500 + | R 304.68 |
*price indicative
- RS stock no.:
- 124-2990
- Mfr. Part No.:
- FM25V20A-G
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 2MB | |
| Product Type | FRAM | |
| Organisation | 256k x 8 Bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 40MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | No | |
| Height | 1.38mm | |
| Length | 4.97mm | |
| Width | 3.98 mm | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8 | |
| Number of Words | 256K | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2V | |
| Minimum Operating Temperature | -40°C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 2MB | ||
Product Type FRAM | ||
Organisation 256k x 8 Bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 40MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals No | ||
Height 1.38mm | ||
Length 4.97mm | ||
Width 3.98 mm | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8 | ||
Number of Words 256K | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2V | ||
Minimum Operating Temperature -40°C | ||
- COO (Country of Origin):
- TH
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
- Infineon 2Mbit SPI FRAM Memory 8-Pin SOIC, FM25V20A-G
- Infineon 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG
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- Infineon 2Mbit Serial-SPI FRAM Memory 8-Pin SOIC, CY15V102QN-50SXE
- Infineon 512kbit SPI FRAM Memory 8-Pin SOIC, FM25V05-G
- Infineon 4kbit SPI FRAM Memory 8-Pin SOIC, FM25040B-G
- Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
- Infineon 128kbit SPI FRAM Memory 8-Pin SOIC, FM25V01A-G