Infineon 2 MB SPI FRAM 8-Pin SOIC, CY15V102QN-50SXE

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Subtotal (1 unit)*

R 252,97

(exc. VAT)

R 290,92

(inc. VAT)

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1 - 9R 252.97
10 - 24R 246.65
25 - 49R 239.25
50 - 74R 229.68
75 +R 220.49

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Packaging Options:
RS stock no.:
188-3468
Mfr. Part No.:
CY15V102QN-50SXE
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

2MB

Organisation

256k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

9ns

Maximum Clock Frequency

50MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Width

5.3 mm

Length

5.3mm

Height

1.78mm

Standards/Approvals

No

Maximum Operating Temperature

125°C

Minimum Supply Voltage

1.71V

Number of Words

256K

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Maximum Supply Voltage

1.89V

Minimum Operating Temperature

-40°C

2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K x 8

Virtually unlimited endurance of 10 trillion (1013) read/write cycles

121-year data retention

NoDelay™ writes

Advanced high-reliability ferroelectric process

Fast serial peripheral interface (SPI)

Up to 50 MHz frequency

Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

Sophisticated write protection scheme

Hardware protection using the Write Protect (WP) pin

Software protection using Write Disable (WRDI) instruction

Software block protection for 1/4, 1/2, or entire array

Device ID and Serial Number

Device ID includes manufacturer ID and product ID

Unique ID

Serial Number

Dedicated 256-byte special sector F-RAM

Dedicated special sector write and read

Stored content can survive up to 3 standard reflow soldering cycles

Low-power consumption

3.7 mA (typ) active current at 40 MHz

2.7 μA (typ) standby current

1.1 μA (typ) Deep Power Down mode current

0.1 μA (typ) Hibernate mode current

Low-voltage operation:

CY15V102QN: VDD = 1.71 V to 1.89 V

CY15B102QN: VDD = 1.8 V to 3.6 V

Automotive operating temperature: -40 °C to +125 °C

AEC-Q100 Grade 1 compliant

8-pin Small Outline Integrated Circuit (SOIC) package

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