Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

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Subtotal (1 tray of 210 units)*

R 10 366,23

(exc. VAT)

R 11 921,07

(inc. VAT)

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Units
Per unit
Per Tray*
210 +R 49.363R 10,366.23

*price indicative

RS stock no.:
188-2551
Mfr. Part No.:
W29N01HVBINF
Manufacturer:
Winbond
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Brand

Winbond

Memory Size

1GB

Product Type

Flash Memory

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Mount Type

Surface

Cell Type

SLC NAND

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2.7V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Height

0.6mm

Standards/Approvals

No

Length

11.1mm

Series

W29N01HV

Number of Words

128M

Number of Bits per Word

8

Supply Current

35mA

Automotive Standard

No

Maximum Random Access Time

25μs

Density : 1Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 1G-bit/128M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Copy Back

Lowest power consumption

Read: 25mA(typ.3V),

Program/Erase: 25mA(typ.3V),

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

48-ball VFBGA

63-ball VFBGA

1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

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