Infineon BFR193WH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 20 V, 3-Pin SOT-323
- RS stock no.:
- 259-1456
- Mfr. Part No.:
- BFR193WH6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 52,30
(exc. VAT)
R 60,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 10,275 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 2.092 | R 52.30 |
| 50 - 75 | R 2.04 | R 51.00 |
| 100 - 225 | R 1.978 | R 49.45 |
| 250 - 975 | R 1.899 | R 47.48 |
| 1000 + | R 1.823 | R 45.58 |
*price indicative
- RS stock no.:
- 259-1456
- Mfr. Part No.:
- BFR193WH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 580mW | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 8GHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Height | 0.9mm | |
| Series | BFR193W | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 580mW | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 8GHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Height 0.9mm | ||
Series BFR193W | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor. It is various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT 8 GHz, NFmin 1 dB at 900 MHz
Pb-free (RoHS compliant) package
Related links
- Infineon BFR193WH6327XTSA1 RF Bipolar Transistor 20 V, 3-Pin SOT-323
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- Infineon BFP540FESDH6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin SOT-343