Infineon BF771E6327HTSA1 RF Bipolar Transistor, 80 mA NPN, 20 V, 3-Pin SOT-23
- RS stock no.:
- 219-5953
- Mfr. Part No.:
- BF771E6327HTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
R 157,05
(exc. VAT)
R 180,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 5,750 unit(s) shipping from 15 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 3.141 | R 157.05 |
| 100 - 100 | R 3.063 | R 153.15 |
| 150 - 200 | R 2.971 | R 148.55 |
| 250 - 450 | R 2.852 | R 142.60 |
| 500 + | R 2.738 | R 136.90 |
*price indicative
- RS stock no.:
- 219-5953
- Mfr. Part No.:
- BF771E6327HTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Transition Frequency ft | 8GHz | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 580mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Series | BF771 | |
| Standards/Approvals | ESD sensitive device, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Transition Frequency ft 8GHz | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 580mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Series BF771 | ||
Standards/Approvals ESD sensitive device, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is used for modulators and amplifiers in TV and VCR tuners.
Pb-free (RoHS compliant)
Qualified according AEC Q101
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