Infineon BFP540ESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343
- RS stock no.:
- 259-1432
- Mfr. Part No.:
- BFP540ESDH6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 257,875
(exc. VAT)
R 296,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,300 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 10.315 | R 257.88 |
| 50 - 75 | R 10.057 | R 251.43 |
| 100 - 225 | R 9.755 | R 243.88 |
| 250 - 975 | R 9.365 | R 234.13 |
| 1000 + | R 8.99 | R 224.75 |
*price indicative
- RS stock no.:
- 259-1432
- Mfr. Part No.:
- BFP540ESDH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 30GHz | |
| Minimum DC Current Gain hFE | 50 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 250mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Series | BFP540 | |
| Length | 2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 10V | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 30GHz | ||
Minimum DC Current Gain hFE 50 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 250mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Series BFP540 | ||
Length 2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value 1000 V (HBM).
Outstanding Gms 21.5 dB
Noise figure F 0.9 dB
Gold metallization for high reliability
Related links
- Infineon RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon BFP540FESDH6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon BFP193WH6327XTSA1 RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon BFP520FH6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon BFP620FH7764XTSA1 RF Bipolar Transistor 7.5 V, 4-Pin TSFP-4-1
- Infineon RF Bipolar Transistor 7.5 V, 4-Pin TSFP-4-1