Infineon Silicon Junction, Single, 30 A, 3-Pin 650 V TO-247 IDW30C65D1XKSA1

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Subtotal (1 pack of 5 units)*

R 233,29

(exc. VAT)

R 268,285

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 46.658R 233.29
10 - 95R 45.492R 227.46
100 - 245R 44.128R 220.64
250 - 495R 42.362R 211.81
500 +R 40.668R 203.34

*price indicative

Packaging Options:
RS stock no.:
218-4372
Mfr. Part No.:
IDW30C65D1XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Forward Current If

30A

Product Type

Silicon Junction

Diode Configuration

Single

Sub Type

Silicon Junction

Mount Type

Through Hole

Package Type

TO-247

Pin Count

3

Maximum Peak Reverse Repetitive Voltage Vrrm

650V

Peak Non-Repetitive Forward Surge Current Ifsm

120A

Maximum Power Dissipation Pd

92W

Peak Reverse Recovery Time trr

71ns

Maximum Forward Voltage Vf

1.35V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Width

5.21 mm

Series

Rapid1

Standards/Approvals

RoHS, JEDEC

Length

16.13mm

Height

41.42mm

Automotive Standard

No

The Infineon Rapid 1 series switching emitter controller power silicon diode in common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs. It is used in various applications like in telecom, UPS, welding, adapter, home appliance and air condition. It has forward current of 30 A.

1.35 V temperature-stable forward voltage

Highest softness-factor for ultimate softness and low EMI filtering

Low reverse recovery charge

Low reverse recovery current

For applications switching between 18 kHz and 40 kHz

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