Infineon Silicon Junction, Single, 15 A, 3-Pin 650 V TO-247 IDW15E65D2FKSA1
- RS stock no.:
- 218-4370
- Mfr. Part No.:
- IDW15E65D2FKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 215,86
(exc. VAT)
R 248,24
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 250 unit(s) shipping from 29 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 21.586 | R 215.86 |
| 20 - 90 | R 21.046 | R 210.46 |
| 100 - 240 | R 20.415 | R 204.15 |
| 250 - 490 | R 19.598 | R 195.98 |
| 500 + | R 18.814 | R 188.14 |
*price indicative
- RS stock no.:
- 218-4370
- Mfr. Part No.:
- IDW15E65D2FKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 15A | |
| Product Type | Silicon Junction | |
| Mount Type | Through Hole | |
| Sub Type | Silicon Junction | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.6V | |
| Peak Reverse Recovery Time trr | 30ns | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A | |
| Maximum Power Dissipation Pd | 85.7W | |
| Maximum Operating Temperature | 175°C | |
| Series | IDW15E65D2 | |
| Height | 41.42mm | |
| Standards/Approvals | RoHS | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Diode Configuration Single | ||
Maximum Forward Current If 15A | ||
Product Type Silicon Junction | ||
Mount Type Through Hole | ||
Sub Type Silicon Junction | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.6V | ||
Peak Reverse Recovery Time trr 30ns | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 100A | ||
Maximum Power Dissipation Pd 85.7W | ||
Maximum Operating Temperature 175°C | ||
Series IDW15E65D2 | ||
Height 41.42mm | ||
Standards/Approvals RoHS | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon Rapid 2 series switching emitter controller power silicon diode in a TO-247 package is designed for applications switching between 40 kHz and 100 kHz. It has forward current of 30 A.
Lowest reverse recovery charge
Low reverse recovery time
Lowest reverse recovery current to provide lowest turn-on losses on the boost switch
Pb-free lead plating
RoHS compliant
Related links
- Infineon Silicon Junction 15 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 75 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 30 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 40 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247
- Infineon Silicon Junction 60 A, 3-Pin 650 V TO-247 IDW30E65D1FKSA1
- Infineon Silicon Junction 80 A, 3-Pin 650 V TO-247 IDW80C65D2XKSA1