Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK
- RS stock no.:
- 249-6926
- Mfr. Part No.:
- IDD10SG60CXTMA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
R 84 975,00
(exc. VAT)
R 97 725,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 33.99 | R 84,975.00 |
| 5000 - 5000 | R 33.14 | R 82,850.00 |
| 7500 + | R 32.146 | R 80,365.00 |
*price indicative
- RS stock no.:
- 249-6926
- Mfr. Part No.:
- IDD10SG60CXTMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | SiC Schottky Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.8V | |
| Series | XDD10SG60 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 860μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.1V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 410A | |
| Maximum Operating Temperature | 175°C | |
| Peak Reverse Recovery Time trr | 10ns | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type SiC Schottky Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.8V | ||
Series XDD10SG60 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 860μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.1V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 410A | ||
Maximum Operating Temperature 175°C | ||
Peak Reverse Recovery Time trr 10ns | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. It does not have forward and reverse recovery. It has temperature independent switching behaviour. It has high surge current capability.
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC for target applications
Breakdown voltage tested at 20mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
Related links
- Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK IDD10SG60CXTMA2
- Infineon 600 V 6 A SiC Schottky Diode Schottky 3-Pin DPAK
- Infineon 600 V 6 A SiC Schottky Diode Schottky 3-Pin DPAK IDD06SG60CXTMA2
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD06G65C6XTMA1
- Infineon 650 V 10 A SiC Schottky Diode Schottky 5-Pin ThinPAK 8x8 IDL10G65C5XUMA2
- Infineon 650 V 10 A SiC Schottky Diode Schottky 5-Pin ThinPAK 8x8
- Wolfspeed 650V 11.5A 3-Pin DPAK C3D03065E