Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK IDD10SG60CXTMA2
- RS stock no.:
- 249-6927
- Mfr. Part No.:
- IDD10SG60CXTMA2
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 unit)*
R 84,57
(exc. VAT)
R 97,26
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 84.57 |
| 10 - 99 | R 82.46 |
| 100 - 249 | R 79.99 |
| 250 - 499 | R 76.79 |
| 500 + | R 73.72 |
*price indicative
- RS stock no.:
- 249-6927
- Mfr. Part No.:
- IDD10SG60CXTMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | SiC Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.8V | |
| Series | XDD10SG60 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 410A | |
| Peak Reverse Current Ir | 860μA | |
| Maximum Forward Voltage Vf | 2.1V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Recovery Time trr | 10ns | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type SiC Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.8V | ||
Series XDD10SG60 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 410A | ||
Peak Reverse Current Ir 860μA | ||
Maximum Forward Voltage Vf 2.1V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Recovery Time trr 10ns | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. It does not have forward and reverse recovery. It has temperature independent switching behaviour. It has high surge current capability.
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC for target applications
Breakdown voltage tested at 20mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
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