onsemi 1200 V 38 A Diode 3-Pin TO-247-3LD NDSH30120CDN
- RS stock no.:
- 218-675
- Mfr. Part No.:
- NDSH30120CDN
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 1 unit)*
R 183,22
(exc. VAT)
R 210,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Pack(s) | Per Pack |
|---|---|
| 1 - 9 | R 183.22 |
| 10 - 99 | R 178.64 |
| 100 + | R 173.28 |
*price indicative
- RS stock no.:
- 218-675
- Mfr. Part No.:
- NDSH30120CDN
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 38A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Dual Anode Common Cathode | |
| Series | NDSH | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 749A | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 38A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Dual Anode Common Cathode | ||
Series NDSH | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 749A | ||
Peak Reverse Current Ir 200μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
Related links
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