onsemi 1.2 kV 24 A Diode 3-Pin TO-247-3LD NDSH20120CDN
- RS stock no.:
- 218-672
- Mfr. Part No.:
- NDSH20120CDN
- Manufacturer:
- onsemi
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R 164,69
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R 189,39
(inc. VAT)
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Pack(s) | Per Pack | Saving |
|---|---|---|
| 1 - 9 | R 164.69 | - |
| 10 - 99 | R 160.57 | 2% |
| 100 - 499 | R 155.75 | 5% |
| 500 - 999 | R 149.52 | 9% |
| 1000 + | R 143.54 | 12% |
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- RS stock no.:
- 218-672
- Mfr. Part No.:
- NDSH20120CDN
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 24A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Dual Anode Common Cathode | |
| Series | NDSH | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 546A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 24A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Dual Anode Common Cathode | ||
Series NDSH | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 546A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Reverse Current Ir 200μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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