Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690 MHz TSNP
- RS stock no.:
- 258-0655
- Mfr. Part No.:
- BGA5H1BN6E6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 258-0655
- Mfr. Part No.:
- BGA5H1BN6E6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Amplifier Type | Low Noise | |
| Operating Frequency | 2690 MHz | |
| Product Type | RF Amplifier | |
| Technology | Silicon Germanium | |
| Gain | 18.1dB | |
| Package Type | TSNP | |
| Minimum Supply Voltage | 1.5V | |
| Maximum Supply Voltage | 3.6V | |
| Pin Count | 6 | |
| P1dB - Compression Point | 60mW | |
| Noise Figure | 1.2dB | |
| Minimum Operating Temperature | -40°C | |
| Third Order Intercept OIP3 | -6dBm | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Series | BGA5H1BN6 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Amplifier Type Low Noise | ||
Operating Frequency 2690 MHz | ||
Product Type RF Amplifier | ||
Technology Silicon Germanium | ||
Gain 18.1dB | ||
Package Type TSNP | ||
Minimum Supply Voltage 1.5V | ||
Maximum Supply Voltage 3.6V | ||
Pin Count 6 | ||
P1dB - Compression Point 60mW | ||
Noise Figure 1.2dB | ||
Minimum Operating Temperature -40°C | ||
Third Order Intercept OIP3 -6dBm | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
Series BGA5H1BN6 | ||
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Related links
- BGA5H1BN6E6327XTSA1 Infineon 18.1 dB 2690 MHz, 6-Pin TSNP-6-10
- BGA7H1N6E6327XTSA1 Infineon 12.5 dB 2690 MHz, 6-Pin TSNP-6-2
- BGA7L1BN6E6327XTSA1 Infineon 13.6 dB 960 MHz, 6-Pin TSNP-6-2
- BGA729N6E6327XTSA1 Infineon 16.3 dB 1000 MHz, 6-Pin TSNP-6-2
- BGA524N6E6327XTSA1 Infineon 19.6 dB 1615 MHz, 6-Pin TSNP-6
- BGA855N6E6327XTSA1 Infineon 17.8 dB 1300 MHz, 6-Pin TSNP-6-10
- BGA125N6E6327XTSA1 Infineon 22.2 dB 1300 MHz, 6-Pin PG-TSNP-6
- BGA123N6E6327XTSA1 Infineon 21.2 dB 1615 MHz, 6-Pin PG-TSNP-6