Infineon RF Amplifier Low Noise 13.6 dB, 6-Pin 960 MHz TSNP-6-2

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 70,48

(exc. VAT)

R 81,05

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 24 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 990R 7.048R 70.48
1000 - 1990R 6.872R 68.72
2000 - 4990R 6.666R 66.66
5000 - 9990R 6.399R 63.99
10000 +R 6.143R 61.43

*price indicative

RS stock no.:
273-5226
Mfr. Part No.:
BGA7L1BN6E6327XTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Amplifier Type

Low Noise

Product Type

RF Amplifier

Operating Frequency

960 MHz

Technology

Silicon Germanium

Gain

13.6dB

Mount Type

Surface

Package Type

TSNP-6-2

Minimum Supply Voltage

1.5V

Pin Count

6

Maximum Supply Voltage

3.6V

Minimum Operating Temperature

-40°C

Noise Figure

0.75dB

Third Order Intercept OIP3

5dBm

Maximum Operating Temperature

85°C

Standards/Approvals

JEDEC47/20/22

Height

0.37mm

Length

1.1mm

Width

0.7 mm

Series

BGA7L1BN6

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon RF Amplifier is a front end low noise amplifier for LTE which covers a wide frequency range from 716 MHz to 960 MHz. The LNA provides 13.6 dB gain and 0. 75 dB noise figure at a current consumption of 4.9 mA. This RF amplifier is base on Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single line two state control and OFF state can be enabled by powering down Vcc.

Pb free package

RoHS compliant

Low noise figure

Digitally on off switch

Low current consumption

Only 1 external SMD component necessary

Related links