BGA5H1BN6E6327XTSA1 Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690 MHz TSNP
- RS stock no.:
- 258-0656
- Mfr. Part No.:
- BGA5H1BN6E6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 38,08
(exc. VAT)
R 43,79
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 11,990 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 3.808 | R 38.08 |
| 20 - 90 | R 3.713 | R 37.13 |
| 100 - 240 | R 3.602 | R 36.02 |
| 250 - 490 | R 3.458 | R 34.58 |
| 500 + | R 3.32 | R 33.20 |
*price indicative
- RS stock no.:
- 258-0656
- Mfr. Part No.:
- BGA5H1BN6E6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Amplifier | |
| Operating Frequency | 2690 MHz | |
| Amplifier Type | Low Noise | |
| Technology | Silicon Germanium | |
| Gain | 18.1dB | |
| Minimum Supply Voltage | 1.5V | |
| Package Type | TSNP | |
| Maximum Supply Voltage | 3.6V | |
| Pin Count | 6 | |
| Minimum Operating Temperature | -40°C | |
| Noise Figure | 1.2dB | |
| P1dB - Compression Point | 60mW | |
| Third Order Intercept OIP3 | -6dBm | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Series | BGA5H1BN6 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Amplifier | ||
Operating Frequency 2690 MHz | ||
Amplifier Type Low Noise | ||
Technology Silicon Germanium | ||
Gain 18.1dB | ||
Minimum Supply Voltage 1.5V | ||
Package Type TSNP | ||
Maximum Supply Voltage 3.6V | ||
Pin Count 6 | ||
Minimum Operating Temperature -40°C | ||
Noise Figure 1.2dB | ||
P1dB - Compression Point 60mW | ||
Third Order Intercept OIP3 -6dBm | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
Series BGA5H1BN6 | ||
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
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