DiodesZetex N-Channel MOSFET, 4.6 A, 30 V Enhancement, 6-Pin SOT-23 ZXMN3A03E6TA
- RS stock no.:
- 669-7524
- Mfr. Part No.:
- ZXMN3A03E6TA
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 125,15
(exc. VAT)
R 143,92
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 980 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 12.515 | R 125.15 |
| 50 - 190 | R 12.202 | R 122.02 |
| 200 - 490 | R 11.836 | R 118.36 |
| 500 - 990 | R 11.363 | R 113.63 |
| 1000 + | R 10.908 | R 109.08 |
*price indicative
- RS stock no.:
- 669-7524
- Mfr. Part No.:
- ZXMN3A03E6TA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12.6nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.95V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.3mm | |
| Width | 1.8mm | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12.6nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.95V | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Operating Temperature 150°C | ||
Height 1.3mm | ||
Width 1.8mm | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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