DiodesZetex Isolated 2 N-Channel MOSFET, 10 A, 20 V Enhancement, 6-Pin WDFN DMN2013UFX-7
- RS stock no.:
- 921-1050
- Mfr. Part No.:
- DMN2013UFX-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (20 units, in packs of 20)*
R 166,62
(exc. VAT)
R 191,62
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 27 October 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 8.331 | R 166.62 |
| 100 - 480 | R 8.122 | R 162.44 |
| 500 - 980 | R 7.879 | R 157.58 |
| 1000 - 2480 | R 7.564 | R 151.28 |
| 2500 + | R 7.261 | R 145.22 |
*price indicative
- RS stock no.:
- 921-1050
- Mfr. Part No.:
- DMN2013UFX-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8V, -8V | |
| Maximum Power Dissipation Pd | 2.14W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Width | 5.1mm | |
| Length | 2.1mm | |
| Height | 0.8mm | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8V, -8V | ||
Maximum Power Dissipation Pd 2.14W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Width 5.1mm | ||
Length 2.1mm | ||
Height 0.8mm | ||
Number of Elements per Chip 2 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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