DiodesZetex DMN10H099SK3 Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252 DMN10H099SK3-13
- RS stock no.:
- 921-1044
- Mfr. Part No.:
- DMN10H099SK3-13
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 160,88
(exc. VAT)
R 185,02
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,420 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 8.044 | R 160.88 |
| 100 - 480 | R 7.843 | R 156.86 |
| 500 - 980 | R 7.608 | R 152.16 |
| 1000 - 2480 | R 7.303 | R 146.06 |
| 2500 + | R 7.011 | R 140.22 |
*price indicative
- RS stock no.:
- 921-1044
- Mfr. Part No.:
- DMN10H099SK3-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMN10H099SK3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25.2nC | |
| Forward Voltage Vf | 0.77V | |
| Maximum Power Dissipation Pd | 34W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.39mm | |
| Width | 6.7 mm | |
| Standards/Approvals | No | |
| Length | 6.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMN10H099SK3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25.2nC | ||
Forward Voltage Vf 0.77V | ||
Maximum Power Dissipation Pd 34W | ||
Maximum Operating Temperature 150°C | ||
Height 2.39mm | ||
Width 6.7 mm | ||
Standards/Approvals No | ||
Length 6.2mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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