Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252 IRLR3410TRLPBF

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Subtotal (1 pack of 25 units)*

R 410,35

(exc. VAT)

R 471,90

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100R 16.414R 410.35
125 - 475R 16.004R 400.10
500 - 975R 15.524R 388.10
1000 - 2475R 14.903R 372.58
2500 +R 14.307R 357.68

*price indicative

Packaging Options:
RS stock no.:
130-1021
Mfr. Part No.:
IRLR3410TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

79W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.73mm

Height

2.39mm

Standards/Approvals

No

Width

6.22 mm

Distrelec Product Id

304-36-997

Automotive Standard

No

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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