DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 8.2 A, 30 V Enhancement, 8-Pin SOIC DMC3026LSD-13
- RS stock no.:
- 921-1029
- Mfr. Part No.:
- DMC3026LSD-13
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 283,38
(exc. VAT)
R 325,88
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 40 unit(s) ready to ship from another location
- Plus 1,160 unit(s) shipping from 02 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 14.169 | R 283.38 |
| 100 - 480 | R 13.815 | R 276.30 |
| 500 - 980 | R 13.40 | R 268.00 |
| 1000 - 2480 | R 12.864 | R 257.28 |
| 2500 + | R 12.35 | R 247.00 |
*price indicative
- RS stock no.:
- 921-1029
- Mfr. Part No.:
- DMC3026LSD-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 8.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 700mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Length | 4.95mm | |
| Width | 3.95mm | |
| Standards/Approvals | MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 8.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 700mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 1.6W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Length 4.95mm | ||
Width 3.95mm | ||
Standards/Approvals MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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