Infineon OptiMOS 3 Type N-Channel MOSFET, 100 A, 80 V Enhancement, 3-Pin TO-220 IPP037N08N3GXKSA1
- RS stock no.:
- 914-0182
- Mfr. Part No.:
- IPP037N08N3GXKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 490,04
(exc. VAT)
R 563,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 80 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 49.004 | R 490.04 |
| 50 - 240 | R 47.779 | R 477.79 |
| 250 - 490 | R 46.346 | R 463.46 |
| 500 - 1240 | R 44.492 | R 444.92 |
| 1250 + | R 42.712 | R 427.12 |
*price indicative
- RS stock no.:
- 914-0182
- Mfr. Part No.:
- IPP037N08N3GXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 88nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 15.95mm | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-37-846 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 88nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 15.95mm | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-37-846 | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP037N08N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 FP IPA028N08N3GXKSA1
- ROHM RJ1N04BBHT N-Channel MOSFET 80 V, 3-Pin D2PAK RJ1N04BBHTL1
- Nexperia N-Channel MOSFET 80 V127
- N-Channel MOSFET 80 V127
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC047N08NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP057N08N3GXKSA1
- Infineon N-Channel MOSFET 80 V, 3-Pin TO-220 IPP80N08S406AKSA1