Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-220 IPP057N08N3GXKSA1

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Subtotal (1 pack of 10 units)*

R 289,97

(exc. VAT)

R 333,47

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90R 28.997R 289.97
100 - 240R 28.272R 282.72
250 - 340R 27.424R 274.24
350 - 490R 26.327R 263.27
500 +R 25.274R 252.74

*price indicative

Packaging Options:
RS stock no.:
826-9471
Distrelec Article No.:
304-44-438
Mfr. Part No.:
IPP057N08N3GXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS 3

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

52nC

Maximum Power Dissipation Pd

150W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

15.95mm

Length

10.36mm

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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