Infineon HEXFET Type N-Channel MOSFET, 209 A, 75 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

R 1 938,55

(exc. VAT)

R 2 229,325

(inc. VAT)

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Units
Per unit
Per Tube*
25 - 25R 77.542R 1,938.55
50 - 75R 75.604R 1,890.10
100 - 225R 73.336R 1,833.40
250 - 475R 70.402R 1,760.05
500 +R 67.586R 1,689.65

*price indicative

RS stock no.:
913-3865
Mfr. Part No.:
IRFP2907PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

209A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

410nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

470W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

15.9mm

Height

20.3mm

Width

5.3 mm

Automotive Standard

No

COO (Country of Origin):
MX

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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