Infineon HEXFET N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 912-8687
- Mfr. Part No.:
- IRF2805PBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
R 2 043,75
(exc. VAT)
R 2 350,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 40.875 | R 2,043.75 |
| 100 - 150 | R 39.853 | R 1,992.65 |
| 200 - 450 | R 38.657 | R 1,932.85 |
| 500 - 950 | R 37.111 | R 1,855.55 |
| 1000 + | R 35.627 | R 1,781.35 |
*price indicative
- RS stock no.:
- 912-8687
- Mfr. Part No.:
- IRF2805PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 330W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.51mm | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 330W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Height 16.51mm | ||
Length 10.67mm | ||
Width 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 75A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF2805PBF
This power MOSFET delivers excellent performance for various electronic applications. Its robust specifications are designed for industrial environments, ensuring both reliability and efficiency. With low on-resistance, this component supports high current capability, making it suitable for advanced circuits.
Features & Benefits
• Supports a maximum continuous drain current of 75A
• Enhances efficiency with a low RDS(on) of 4.7mΩ
• Compatible with +20 V/-20 V gate-source voltage for improved flexibility
• Capable of fast switching speeds to meet dynamic performance needs
• Supports repetitive avalanche handling for operational resilience
Applications
• Used in industrial motor drives for effective power control
• Suitable for power management in automation systems
• Employed in renewable energy systems for efficient switching
• Utilised in high-performance and durable power tools
• Applicable in battery management systems for electric vehicles
What is the maximum temperature this component can withstand?
It can operate within a temperature range of -55°C to +175°C for performance in extreme conditions.
How does this MOSFET handle high current applications?
It is designed to manage a continuous drain current of 75A, making it suitable for high current demands.
Can it be used in applications with fast switching requirements?
Yes, this MOSFET supports fast switching speeds, ideal for applications requiring dynamic performance.
Is this device suitable for use in power inverters?
Yes, its thermal stability and capacity for high current handling make it appropriate for power inverter applications in renewable energy systems.
What are the implications of its low on-resistance?
The low RDS(on) reduces power losses during operation, contributing to improved efficiency and thermal performance.
Related links
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRF2805PBF
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB7546PBF
- Infineon HEXFET N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IRF2807ZPBF
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220