N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB Infineon IRF2805PBF

RS stock no.:: 912-8687
Mfr. Part No.:: IRF2805PBF
Manufacturer:: Infineon

N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB Infineon IRF2805PBF

Bulk discount available

Subtotal (1 tube of 50 units)**

R 1 272 75

(exc. VAT)

R 1 463 65

(inc. VAT)

1100 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Tube**
50 - 50	R 25,455	R 1 272,75
100 - 150	R 24,819	R 1 240,95
200 - 450	R 24,074	R 1 203,70
500 - 950	R 23,111	R 1 155,55
1000 +	R 22,187	R 1 109,35

**price indicative

RS stock no.:: 912-8687
Mfr. Part No.:: IRF2805PBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 75A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF2805PBF

This power MOSFET delivers excellent performance for various electronic applications. Its robust specifications are designed for industrial environments, ensuring both reliability and efficiency. With low on-resistance, this component supports high current capability, making it suitable for advanced circuits.

Features & Benefits

• Supports a maximum continuous drain current of 75A
• Enhances efficiency with a low RDS(on) of 4.7mΩ
• Compatible with +20 V/-20 V gate-source voltage for improved flexibility
• Capable of fast switching speeds to meet dynamic performance needs
• Supports repetitive avalanche handling for operational resilience

Applications

• Used in industrial motor drives for effective power control
• Suitable for power management in automation systems
• Employed in renewable energy systems for efficient switching
• Utilised in high-performance and durable power tools
• Applicable in battery management systems for electric vehicles

What is the maximum temperature this component can withstand?

It can operate within a temperature range of -55°C to +175°C for performance in extreme conditions.

How does this MOSFET handle high current applications?

It is designed to manage a continuous drain current of 75A, making it suitable for high current demands.

Can it be used in applications with fast switching requirements?

Yes, this MOSFET supports fast switching speeds, ideal for applications requiring dynamic performance.

Is this device suitable for use in power inverters?

Yes, its thermal stability and capacity for high current handling make it appropriate for power inverter applications in renewable energy systems.

What are the implications of its low on-resistance?

The low RDS(on) reduces power losses during operation, contributing to improved efficiency and thermal performance.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	75 A
Maximum Drain Source Voltage	55 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	330 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Width	4.83mm
Typical Gate Charge @ Vgs	150 nC @ 10 V
Length	10.67mm
Maximum Operating Temperature	+175 °C
Height	16.51mm
Minimum Operating Temperature	-55 °C