STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 2.2 A, 1 kV Enhancement, 3-Pin TO-252 STD4NK100Z
- RS stock no.:
- 906-2776
- Mfr. Part No.:
- STD4NK100Z
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 261,86
(exc. VAT)
R 301,14
(inc. VAT)
Add 30 units to get free delivery
In Stock
- 2,215 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 52.372 | R 261.86 |
| 50 - 245 | R 51.062 | R 255.31 |
| 250 - 495 | R 49.53 | R 247.65 |
| 500 - 2495 | R 47.548 | R 237.74 |
| 2500 + | R 45.646 | R 228.23 |
*price indicative
- RS stock no.:
- 906-2776
- Mfr. Part No.:
- STD4NK100Z
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 90W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.2 mm | |
| Height | 2.4mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series MDmesh, SuperMESH | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 90W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.2 mm | ||
Height 2.4mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin IPAK