STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 6.5 A, 1 kV Enhancement, 3-Pin TO-220 STP8NK100Z
- RS stock no.:
- 687-5285
- Mfr. Part No.:
- STP8NK100Z
- Manufacturer:
- STMicroelectronics
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View bulk pricing optionsSubtotal (2 units, in packs of 2)*
R 131,83
(exc. VAT)
R 151,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- 658 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 65.915 | R 131.83 |
| 10 - 18 | R 64.265 | R 128.53 |
| 20 - 48 | R 62.335 | R 124.67 |
| 50 - 98 | R 59.84 | R 119.68 |
| 100 + | R 57.445 | R 114.89 |
*price indicative
- RS stock no.:
- 687-5285
- Mfr. Part No.:
- STP8NK100Z
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-220 | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.85Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6mm | |
| Length | 10.4mm | |
| Height | 9.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-220 | ||
Series MDmesh, SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.85Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.6mm | ||
Length 10.4mm | ||
Height 9.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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