Infineon CoolMOS C6 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 3-Pin TO-220 IPP60R099C6XKSA1
- RS stock no.:
- 898-6895
- Mfr. Part No.:
- IPP60R099C6XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 242,50
(exc. VAT)
R 278,88
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 390 unit(s) shipping from 29 December 2025
- Plus 504 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 121.25 | R 242.50 |
| 10 - 48 | R 118.22 | R 236.44 |
| 50 - 98 | R 114.675 | R 229.35 |
| 100 - 248 | R 110.09 | R 220.18 |
| 250 + | R 105.685 | R 211.37 |
*price indicative
- RS stock no.:
- 898-6895
- Mfr. Part No.:
- IPP60R099C6XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C6 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 119nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.65mm | |
| Height | 16.15mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C6 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 119nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 10.65mm | ||
Height 16.15mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-220 IPP60R099C6XKSA1
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R099C6FKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R050M2HXKSA1
- onsemi N-Channel MOSFET 650 V TO247-4L NTH4L075N065SC1
- ROHM SCT SiC N-Channel MOSFET 650 V, 7-Pin D2PAK SCT3060AW7TL
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R050M2HXKSA1
- STMicroelectronics STripFET II N-Channel MOSFET 60 V, 3-Pin TO-220 STP45NF06
- Infineon CoolMOS™ C6 N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R190C6FKSA1