Infineon CoolMOS C6 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 3-Pin TO-220 IPP60R099C6XKSA1
- RS stock no.:
- 898-6895
- Mfr. Part No.:
- IPP60R099C6XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 202,46
(exc. VAT)
R 232,82
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 894 unit(s) shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 101.23 | R 202.46 |
| 10 - 48 | R 98.70 | R 197.40 |
| 50 - 98 | R 95.74 | R 191.48 |
| 100 - 248 | R 91.91 | R 183.82 |
| 250 + | R 88.235 | R 176.47 |
*price indicative
- RS stock no.:
- 898-6895
- Mfr. Part No.:
- IPP60R099C6XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS C6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 119nC | |
| Maximum Power Dissipation Pd | 35W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 16.15mm | |
| Length | 10.65mm | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS C6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 119nC | ||
Maximum Power Dissipation Pd 35W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 16.15mm | ||
Length 10.65mm | ||
Width 4.9 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
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- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R099C6FKSA1
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
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- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R190C6FKSA1
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R041C6FKSA1