Infineon CoolMOS C6 Type N-Channel MOSFET, 10.6 A, 650 V Enhancement, 3-Pin TO-252 IPD60R380C6ATMA1

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Subtotal (1 pack of 2 units)*

R 39,65

(exc. VAT)

R 45,598

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 19.825R 39.65
50 - 198R 19.33R 38.66
200 - 998R 18.75R 37.50
1000 - 4998R 18.00R 36.00
5000 +R 17.28R 34.56

*price indicative

Packaging Options:
RS stock no.:
753-3011
Mfr. Part No.:
IPD60R380C6ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.6A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS C6

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

380mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83W

Maximum Operating Temperature

150°C

Length

6.73mm

Height

2.41mm

Standards/Approvals

No

Automotive Standard

No

Infineon CoolMOS™C6/C7 Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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