Infineon CoolMOS C6 Type N-Channel MOSFET, 10.6 A, 650 V Enhancement, 3-Pin TO-252 IPD60R380C6ATMA1

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Subtotal (1 pack of 2 units)*

R 61,37

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R 70,576

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 30.685R 61.37
50 - 198R 29.92R 59.84
200 - 998R 29.02R 58.04
1000 - 4998R 27.86R 55.72
5000 +R 26.745R 53.49

*price indicative

Packaging Options:
RS stock no.:
753-3011
Mfr. Part No.:
IPD60R380C6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.6A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS C6

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

380mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

6.22 mm

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Automotive Standard

No

Infineon CoolMOS™C6/C7 Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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