Infineon CoolMOS C6 Type N-Channel MOSFET, 10.6 A, 650 V Enhancement, 3-Pin TO-252 IPD60R380C6ATMA1
- RS stock no.:
- 753-3011
- Mfr. Part No.:
- IPD60R380C6ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 63,09
(exc. VAT)
R 72,554
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 21 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 31.545 | R 63.09 |
| 50 - 198 | R 30.755 | R 61.51 |
| 200 - 998 | R 29.83 | R 59.66 |
| 1000 - 4998 | R 28.635 | R 57.27 |
| 5000 + | R 27.49 | R 54.98 |
*price indicative
- RS stock no.:
- 753-3011
- Mfr. Part No.:
- IPD60R380C6ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | CoolMOS C6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series CoolMOS C6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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