Infineon CoolMOS C6 Type N-Channel MOSFET, 10.6 A, 650 V Enhancement, 3-Pin TO-252 IPD60R380C6ATMA1
- RS stock no.:
- 753-3011
- Mfr. Part No.:
- IPD60R380C6ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 49,41
(exc. VAT)
R 56,822
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 23 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 24.705 | R 49.41 |
| 50 - 198 | R 24.085 | R 48.17 |
| 200 - 998 | R 23.36 | R 46.72 |
| 1000 - 4998 | R 22.425 | R 44.85 |
| 5000 + | R 21.53 | R 43.06 |
*price indicative
- RS stock no.:
- 753-3011
- Mfr. Part No.:
- IPD60R380C6ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | CoolMOS C6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series CoolMOS C6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP60R099C6XKSA1
- Infineon CoolMOS C6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R099C6FKSA1