Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK IPD50N03S4L06ATMA1
- RS stock no.:
- 857-4590
- Mfr. Part No.:
- IPD50N03S4L06ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 18 057,50
(exc. VAT)
R 20 765,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 7.223 | R 18,057.50 |
| 5000 - 10000 | R 7.078 | R 17,695.00 |
| 12500 + | R 6.866 | R 17,165.00 |
*price indicative
- RS stock no.:
- 857-4590
- Mfr. Part No.:
- IPD50N03S4L06ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS™ -T2 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 56 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS™ -T2 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 56 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 24 nC @ 10 V | ||
Transistor Material Si | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
Exempt
Related links
- Infineon OptiMOS™ -T2 N-Channel MOSFET 30 V, 3-Pin DPAK IPD90N03S4L03ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin DPAK IPD50N04S410ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 40 V, 3-Pin DPAK IPD75N04S406ATMA1
- onsemi PowerTrench N-Channel MOSFET 40 V, 3-Pin DPAK FDD8444L-F085
- Vishay SQ Rugged N-Channel MOSFET 50 V, 3-Pin DPAK SQD50N05-11L_GE3
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin DPAK IRFR4620PBF
- N-Channel MOSFET Transistor 600 V, 3-Pin DPAK Fairchild FCD380N60E
- Fairchild UniFET N-Channel MOSFET 500 V, 3-Pin DPAK FDD5N50UTM_WS