MPN

Infineon HEXFET N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZTRPBF

Name: Infineon HEXFET N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZTRPBF
Brand: Infineon
SKU: 827-4057
Availability: InStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	56 A
	Maximum Drain Source Voltage	30 V
	Package Type	DPAK (TO-252)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	12.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.25V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	50 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	9.6 nC @ 4.5 V
	Width	6.22mm
	Length	6.73mm
	Minimum Operating Temperature	-55 °C
	Height	2.39mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 56 A
	Maximum Drain Source Voltage 30 V
	Package Type DPAK (TO-252)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 12.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.25V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 50 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 9.6 nC @ 4.5 V
	Width 6.22mm
	Length 6.73mm
	Minimum Operating Temperature -55 °C
	Height 2.39mm

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