Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin TO-252

Image representative of range

View all MOSFETs

Subtotal (1 reel of 3000 units)*

R 21 561,00

(exc. VAT)

R 24 795,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +R 7.187R 21,561.00

*price indicative

RS stock no.:
165-5600
Mfr. Part No.:
IRLR024NTRLPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

45W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Length

6.73mm

Height

2.39mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links