Toshiba TK Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-220 TK40E10N1,S1X(S
- RS stock no.:
- 827-6220
- Mfr. Part No.:
- TK40E10N1,S1X(S
- Manufacturer:
- Toshiba
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 113,25
(exc. VAT)
R 130,25
(inc. VAT)
Add 70 units to get free delivery
In Stock
- 405 unit(s) ready to ship from another location
- Plus 1,925 unit(s) shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 22.65 | R 113.25 |
| 25 - 70 | R 22.084 | R 110.42 |
| 75 - 145 | R 21.422 | R 107.11 |
| 150 - 295 | R 20.566 | R 102.83 |
| 300 + | R 19.744 | R 98.72 |
*price indicative
- RS stock no.:
- 827-6220
- Mfr. Part No.:
- TK40E10N1,S1X(S
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 126W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 15.1mm | |
| Length | 10.16mm | |
| Width | 4.45 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 126W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 15.1mm | ||
Length 10.16mm | ||
Width 4.45 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
Related links
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