Toshiba TK N-Channel MOSFET, 60 A, 120 V Enhancement, 3-Pin TO-220 TK32E12N1,S1X(S
- RS stock no.:
- 168-7971
- Mfr. Part No.:
- TK32E12N1,S1X(S
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
R 800,55
(exc. VAT)
R 920,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 10 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | R 16.011 | R 800.55 |
| 250 - 450 | R 15.611 | R 780.55 |
| 500 - 1200 | R 15.143 | R 757.15 |
| 1250 - 2450 | R 14.537 | R 726.85 |
| 2500 + | R 13.955 | R 697.75 |
*price indicative
- RS stock no.:
- 168-7971
- Mfr. Part No.:
- TK32E12N1,S1X(S
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 98W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.16mm | |
| Height | 15.1mm | |
| Width | 4.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 98W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 10.16mm | ||
Height 15.1mm | ||
Width 4.45mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
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