Toshiba TK Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-3P TK20J60W,S1VQ(O
- RS stock no.:
- 827-6163
- Mfr. Part No.:
- TK20J60W,S1VQ(O
- Manufacturer:
- Toshiba
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 252,51
(exc. VAT)
R 290,386
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 256 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 126.255 | R 252.51 |
| 20 - 38 | R 123.10 | R 246.20 |
| 40 - 72 | R 119.405 | R 238.81 |
| 74 - 148 | R 114.63 | R 229.26 |
| 150 + | R 110.045 | R 220.09 |
*price indicative
- RS stock no.:
- 827-6163
- Mfr. Part No.:
- TK20J60W,S1VQ(O
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | TK | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 155mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 165W | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20mm | |
| Width | 4.5 mm | |
| Standards/Approvals | No | |
| Length | 15.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series TK | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 155mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 165W | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Height 20mm | ||
Width 4.5 mm | ||
Standards/Approvals No | ||
Length 15.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
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MOSFET Transistors, Toshiba
Related links
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