Toshiba TK N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247 TK20N60W,S1VF(S
- RS stock no.:
- 827-6167
- Mfr. Part No.:
- TK20N60W,S1VF(S
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 61,73
(exc. VAT)
R 70,99
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 2 unit(s) shipping from 22 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 30.865 | R 61.73 |
| 20 - 38 | R 30.095 | R 60.19 |
| 40 - 72 | R 29.19 | R 58.38 |
| 74 - 148 | R 28.02 | R 56.04 |
| 150 + | R 26.90 | R 53.80 |
*price indicative
- RS stock no.:
- 827-6167
- Mfr. Part No.:
- TK20N60W,S1VF(S
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 155mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 165W | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.02mm | |
| Standards/Approvals | No | |
| Length | 15.94mm | |
| Height | 20.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 155mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 165W | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Width 5.02mm | ||
Standards/Approvals No | ||
Length 15.94mm | ||
Height 20.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
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MOSFET Transistors, Toshiba
Related links
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