Infineon HEXFET N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF

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Subtotal (1 pack of 5 units)*

R 174,32

(exc. VAT)

R 200,47

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 34.864R 174.32
25 - 95R 33.992R 169.96
100 - 245R 32.972R 164.86
250 - 495R 31.654R 158.27
500 +R 30.388R 151.94

*price indicative

Packaging Options:
RS stock no.:
784-8979
Mfr. Part No.:
IRFU4510PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

143 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

54 nC @ 10 V

Transistor Material

Si

Width

2.39mm

Length

6.73mm

Maximum Operating Temperature

+175 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

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