Infineon HEXFET N-Channel MOSFET, 7.3 A, 100 V Enhancement, 8-Pin SOIC IRF7495TRPBF
- RS stock no.:
- 827-3877
- Distrelec Article No.:
- 304-44-453
- Mfr. Part No.:
- IRF7495TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
R 261,12
(exc. VAT)
R 300,29
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,990 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 26.112 | R 261.12 |
| 100 - 490 | R 25.459 | R 254.59 |
| 500 - 1990 | R 24.695 | R 246.95 |
| 2000 - 3990 | R 23.707 | R 237.07 |
| 4000 + | R 22.759 | R 227.59 |
*price indicative
- RS stock no.:
- 827-3877
- Distrelec Article No.:
- 304-44-453
- Mfr. Part No.:
- IRF7495TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Height 1.5mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
N-Channel Power MOSFET 100V, Infineon
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